A Focused Ion Beam (FIB) instrument uses a finely focused ion beam to modify and image samples. FIB is chiefly used to create very precise place specific cross sections (below 100 nm accuracy) of a sample for subsequent imaging via SEM, STEM or TEM or to perform circuit modification. Additionally FIB can be used to image a sample directly, detecting emitted electrons. The contrast mechanism for FIB is different than for SEM or S/TEM, so for some specific examples FIB can provide unique information. A Dual Beam FIB integrates these two techniques into one tool thus enabling sample prep with FIB and SEM imaging without exchanging the sample.
For an electrical connector, it is important that the gold plating is thick enough and has good wear- resistance over its lifetime. To get a good image of such plating a Focused Ion Beam (FIB) is used. A tiny hole is milled and the resulting polished surface is analyzed using an electron microscope. In most case this electron microscope and FIB are combined in a so called DualBeam system.
FIB cross section features:
- FIB has revolutionized sample preparation for TEM samples, making it possible to identify sub-micron features and precisely prepare cross sections
- FIB-prepared sections are used extensively in SEM microscopy, where the FIB preparation, SEM imaging, and elemental analysis can happen on the same multi-technique tool.
- FIB-prepared sections are also used in Auger Electron Spectroscopy to provide elemental identification of subsurface features quickly and precisely
- It is an ideal tool for examining products with small, difficult-to-access features, such those found in the semiconductor industry and for sub-surface particle identification.
- NO mechanical stress is applied to your sample
- NO contaminants like grinding/polishing slurries are applied
- It is a good alternative for products that are difficult to mechanically polish, such as a soft polymers.
- Thin film coatings
- Plating thicknesses
- Elucidate a specific IC structure or Failure Analysis hotspot
- Reverse engineering (e.g., reveal proces node of IC)
- Reveal a particle or feature (like grain boundary or an inclusion)
In case you want us to review your case do not hesitate to contact us.More Services: SEM-EDX, Chip Deprocessing, FIB cross sectioning, Competitor Analysis on chip, Semiconductor Patent Infringement analysis, FIB Circuit Edit, Failure Analysis, Reverse Engineering solutions