A Focused Ion Beam (FIB) instrument uses a finely focused ion beam to modify and image samples. FIB is chiefly used to create very precise place specific cross sections (below 100 nm accuracy) of a sample for subsequent imaging via SEM, STEM or TEM or to perform circuit modification. Additionally FIB can be used to image a sample directly, detecting emitted electrons. The contrast mechanism for FIB is different than for SEM or S/TEM, so for some specific examples FIB can provide unique information. A Dual Beam FIB integrates these two techniques into one tool thus enabling sample prep with FIB and SEM imaging without exchanging the sample.
An example:
FIB cross-section showed interruption of plating
For an electrical connector, it is important that the gold plating is thick enough and has good wear- resistance over its lifetime. To get a good image of such plating a Focused Ion Beam (FIB) is used. A tiny hole is milled and the resulting polished surface is analyzed using an electron microscope. In most case this electron microscope and FIB are combined in a so called DualBeam system.
FIB cross section features:
- FIB has revolutionized sample preparation for TEM samples, making it possible to identify sub-micron features and precisely prepare cross sections
- FIB-prepared sections are used extensively in SEM microscopy, where the FIB preparation, SEM imaging, and elemental analysis can happen on the same multi-technique tool.
- FIB-prepared sections are also used in Auger Electron Spectroscopy to provide elemental identification of subsurface features quickly and precisely
- It is an ideal tool for examining products with small, difficult-to-access features, such those found in the semiconductor industry and for sub-surface particle identification.
- NO mechanical stress is applied to your sample
- NO contaminants like grinding/polishing slurries are applied
- It is a good alternative for products that are difficult to mechanically polish, such as a soft polymers.
Some applications:
- Thin film coatings
- Plating thicknesses
- Elucidate a specific IC structure or Failure Analysis hotspot
- Reverse engineering (e.g., reveal proces node of IC)
- Reveal a particle or feature (like grain boundary or an inclusion)
In case you want us to review your case do not hesitate to contact us.
More Services: SEM-EDX, Chip Deprocessing, FIB cross sectioning, Competitor Analysis on chip, Semiconductor Patent Infringement analysis, FIB Circuit Edit, Failure Analysis, Reverse Engineering solutions
